Abstract
The effects of radiation on the electrical-interface-state density (Dit) and series resistance (Rs) characteristics of BiFeO3 MOS capacitors were studied in this work. To study the response of MOS devices to gamma irradiation over a range of doses, MOS samples were irradiated using a Co-60 gamma-ray source from 0.5 to 16 grays at a dose rate of 0.0030Gy/s. C–V and G/ω–V measurements were recorded prior to and after irradiation at high (1MHz) frequency. The effects of the radiation were determined from analysis of the C–V and G/ω–V curves. A slightly decrease in the Rs values with increasing irradiation dose was observed. The total interface-state density was found to decrease because of the reordering and restructuring of radiation-induced defects in the MOS capacitors. The experimental results indicate that the electrical Rs and Dit characteristics of BiFeO3 MOS capacitors depend on the gamma-irradiation dose, and the calculated densities of the interface states are on the order of 1011eV−1cm−2. However, the calculated Dit values are not high enough to pin the Fermi level of the Si substrate and thereby corrupt device operation over the given dose range.
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