Abstract
We investigate the effects of Ga deposition rate (RGa) and Sb flux (PSb) on the morphology of GaSb quantum dots (QDs). GaSb QDs are formed on GaAs at 420 °C by Stranski‐Krastanov (SK) mode under various conditions of RGa (0.13‐0.73 monolayer (ML)/s) and PSb (1.0‐4.2 × 10‐7 Torr). An atomic microscope study shows that the density nQD of GaSb QDs is markedly affected by PSb and RGa; no (or few) QDs are formed at high RGa (∼ 0.73 ML/s) and at low PSb (≤1.2 × 10‐7 Torr). As RGa (PSb) increases, nQD first increases and then decreases. nQD reaches its maximum (∼1 × 1011 cm‐2), when the V‐III ratio is about 3.6. We also analyze the experimental data by using a rate equation model and discuss the dependences of nQD on RGa and PSb.
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