Effects of fluoride residue on Cu agglomeration in Cu/low- k interconnects

Abstract

We have investigated the effects of fluoride residue on the thermal stability of a Cu/barrier metal (BM)/porous low- k film ( k < 2.3) structure. We confirmed that the Cu agglomerated more on a BM/inter layer dielectric (ILD) with a fluoride residue. To consider the effect of fluoride residue on Cu agglomeration, the structural state at the Cu/BM interface was evaluated with a cross-section transmission electron microscope (TEM) and atomic force microscope (AFM). And the chemical bonding state at the Cu/BM interface was evaluated with the interface peeling-off method and X-ray photoelectron spectroscopy (XPS). Moreover, we confirmed the oxidation of Cu with fluoride in accelerated conditions to clarify the effect of fluoride on Cu. Our experiments suggested that the fluoride residue led to the formation of a metal fluoride, and this accelerated the Cu agglomeration accompanying an increase in Cu oxidation.