Abstract
Scattered light, referred to as flare hereafter, is a concern in extreme ultraviolet (EUV) lithography. The major problem related to flare is critical dimension (CD) variation. Flare compensation technologies have been investigated for the realization of EUV lithography. For effective compensation, basic understanding of the effects of flare on image formation is important. In this study, the effects of flare on latent image formation was investigated on the basis of the reaction mechanisms of chemically amplified EUV resists. The effects of flare on chemical gradients depended on the neutralization mechanism of chemically amplified resists. Also, the flare affected not only horizontal profiles but also vertical profiles.
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