Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films

Abstract

Based on the complexity and difficult understanding on low-temperature resistivity minimum in manganites, the effect of ferroelectric-poling-induced strain on Kondo-type transport behavior was systemically investigated as a function of magnetic field for ${\text{La}}_{0.7}{\text{Ca}}_{0.15}{\text{Sr}}_{0.15}{\text{MnO}}_{3}$ manganite thin films grown on ferroelectric $0.67\text{Pb}({\text{Mg}}_{1/3}{\text{Nb}}_{2/3}){\text{O}}_{3}\text{\ensuremath{-}}0.33{\text{PbTiO}}_{3}$ (PMN-PT) single-crystal substrates. The results show that the low-temperature resistivity upturn is mainly caused from quantum correction effects driven by electron-electron interaction and inelastic scattering. Whether the PMN-PT substrate is in unpoled or poled state, the temperature where the resistivity shows an upturn near 15 K shifts to a higher temperature under magnetic field. The ferroelectric poling induces a reduction in the in-plane tensile strain and thus the lattice distortion of the film, which suppresses the resistivity upturn. These prove that the local lattice distortion relevant to the strain of the film is one of the main disorders that influence the resistivity upturn. The present results will be meaning to understand the physical mechanism of Kondo-type behavior at low temperature in colossal magnetoresistance manganites.