Effects of Fast Neutron Irradiation and of Impurities on the X‐Ray Intensities Diffracted by Germanium and Silicon Crystals

Abstract

AbstractAn investigation is made of the effects of fast neutron irradiation and of impurities on the X‐ray diffraction intensities of Ge and Si crystals having low dislocation densities. Monochromatic CuKα and MoKα radiations are used in both the transmission and reflection geometries. Appreciable increases of the integrated intensities are found for Si crystals irradiated with a dose of 3 × 1020 nvt. These increases are greatest if transmission geometry and MoKα radiation (thin crystal case) are used. There is, however, no variation in the diffraction intensities in anomalous transmission. The irradiation is found to have no effect on the diffraction intensities in Ge crystals irradiated up to 3 × 1020 nvt. With Si crystals doped with boron up to a maximum atomic fraction of 1.3 × 10−3 the intensities increase with increasing concentration of the doping element in the transmission geometry, when MoKα radiation is used. In anomalous transmission the intensities vary greatly in different regions of the most heavily doped Si crystal.