Abstract
SummaryIn this paper, both experimetal and simulation results, showing the effects of Junction temperature, forward current and the rate of fall of forward current, or commutating di/dt on the reverse recoveyr behaviour of modern fast power diodes are presented. The main parameters used to characterise the reverse recover performance of a semiconductor diode, are the reverse recovery charge, peak recovery current and reverse recovery time. The diode snappiness phenomenon due to a current chop-off during reverse recovery, was also investigated and linked with the above parameters.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.