Abstract
For the first time, the impact of externally applied static electric and magnetic field on the nonlinear optical rectification (NOR) and second harmonic generation (SHG) coefficients of GaAs/GaAlAs zigzag quantum well is theoretically investigated in this study. Additionally, we examined the effect of physical parameters such as width and depth of the structure on these coefficients. We have numerically solved the time-independent Schrödinger equation by using the diagonalization method under the effective mass approximation for obtaining subband energy levels and wave functions of the structure, and then we have used the compact density matrix method to obtain the analytical expressions of NOR and SHG coefficients. The obtained numerical results showed that when the magnitude of the externally applied electric and magnetic fields is increased, the peak position of NOR and SHG shifts to blue, and by increasing the width and potential depth of the quantum well, it shifts to red.
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