Abstract
A low-temperature micro-photoluminescence (μ-PL) investigation of InAs/GaAs quantum dots (QDs) exposed to a lateral external electric field is reported. It is demonstrated that the QDs PL signal could be increased several times by altering the external and/or the internal electric field. The internal field in the vicinity of the dots could be altered by means of an additional infra-red laser. We propose a model, which is based on an essentially faster lateral transport of the charge carriers achieved in an external electric field. Consequently, also the capture probability into the dots and subsequently the dot luminescence is also enhanced. The results obtained suggest that the lateral electric fields play a major role for the dot luminescence intensity measured in our experiment.
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