Abstract
A new optoelectronic device based on excitonpolariton was studied. In particular a Mach-Zehnder interference device fabricated by using a GaAs quantum well was studied. We simulated the output characteristics of Mach-Zehnder interference device by using a Finite Difference Time Domain (FDTD) method. Then we compared them with the experimental results measured in a low-temperature. After that we obtained the numerical values of electro-optic effect coefficients. Those were as large as 105×10^(-11) m/V for 4.5 K, while 74×10^(-11) m/V for 77 K. Therefore this estimation is considerably large, showing 57 (4 K) and 41 (77 K) times larger than conventional KDP crystal. This effect is probably caused by the excitonpolariton effect. Furthermore, we performed a photocurrent experiment to understand the transmitted light phase change characteristics, causing such large electro-optics effect at a comparatively higher temperature. Temperature dependence of photocurrent showed that the absorption edge and exciton peak remained constant up to 77 K, and then shifted to lower energy as the temperature increased. This probably explains how the large electro-optic effect can be obtained at a comparatively high temperature, i.e., 77 K.
Highlights
Optical communication systems utilize optical devices to modulate, to transmit and to process optical signal
In order to realize such devices, we examined the basic characteristics of the Mach-Zehnder (MZ) type interference device
Simulation results: In the simulation, refractive index was changed in one side of the waveguides in every simulation by adding 0.00025 refractive index difference ∆n
Summary
Optical communication systems utilize optical devices to modulate, to transmit and to process optical signal. In order to realize such devices, we examined the basic characteristics of the Mach-Zehnder (MZ) type interference device. The MZ type interference device can be used as an optical modulator in an optical communication system (Cvijetic, 2004). The MZ interference device with a multiple quantum well waveguide can be a promising candidate for an ultrafast modulator due to excitonicpolariton effect (Tada et al, 2005; Katsuyama and Ogawa, 1994; Jeffrey and Ashley, 1994). We analyzed the characteristics of MZ interference device fabricated by using a GaAs quantum well. We measured photocurrent of the device to understand the phase shift relating to the interference effect (Steger et al, 2012)
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Research Journal of Applied Sciences, Engineering and Technology
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
