Abstract
Bi3.25Eu0.75Ti3O12(BET) thin films with various excess bismuth (Bi) contents (5, 10, 15, 20-mol%) were grown by a metal-organic decomposition method at 700 °C. Effects of excess Bi content on microstructure and electric properties of BET thin films were investigated. BET thin film with 10-mol% excess Bi content shows larger remnant polarization (66.3 C/cm2), better fatigue endurance (3% loss of 2Prafter 1.8×1010switching cycles), and lower leakage current density (1×10-7A/cm2) than those of other prepared BET thin films. Additionally, the mechanisms concerning the dependence of the properties on excess Bi content of BET thin films were discussed.
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