Abstract
a- and b-axis-oriented (Bi3.25Nd0.75 - xEux)Ti3O12 (BNEuT, x = 0–0.75) films of 3.0 µm thickness were fabricated on conductive Nb:TiO2(101) substrates containing 0.79 mass % Nb by high-temperature sputtering at 650 °C, and their structural and ferroelectric characteristics were investigated. All the films had a mostly single-phase orthorhombic structure, with high degrees of a- and b-axis orientations of 99.0–99.8%. The lattice parameters (a-, b-, and c-axis lengths) and the calculated orthorhombic lattice distortion decreased monotonically with increasing Eu content. The microstructure of BNEuT films with x = 0–0.50 was nanoplate-like, whereas that of films with x≥0.60 was significantly more bulk-like. The real room-temperature remanent polarization (2Pr*), taking the porosity between the nanoplates into account, had a maximum value of 2Pr* = 87 µC/cm2 at x = 0.10, which was approximately 1.3 times larger than that (65 µC/cm2) of the nondoped BNT film. It is shown that lattice distortion caused by rotation of octahedra in the a–b plane due to the Eu substitution plays a significant role in the improvement of ferroelectricity.
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