Effects of electron doping level on minority carrier lifetimes in n-type mid-wave infrared InAs/InAs1−xSbx type-II superlattices

Abstract

The minority carrier lifetime (τMC) and equilibrium electron concentration (i.e., the doping level, n0) are both important values that directly determine diffusion current in infrared photodetectors utilizing n-type absorbing regions. Here, time-resolved microwave reflectance measurements are used to non-destructively measure both of these values in mid-wave infrared InAs/InAs1−xSbx type-II superlattices with varying n-type doping levels between 2×1014 cm−3 and 2×1016 cm−3. The measured data are analyzed using carrier recombination theory to determine the doping level ranges where Shockley-Read-Hall (SRH), radiative, and Auger recombination limit τMC. The optimal doping level, which minimizes dark current, is experimentally determined and corresponds to the electron density at which τMC switches from SRH limited to Auger limited behavior. A comparison of two InAs/InAs1−xSbx photodetectors of different equilibrium electron densities demonstrates a decrease in dark current for a doping level near the optimal n0τMC product.