Abstract
Vacuum-deposited Zn3P2 films, prepared with and without low-energy electron bombardment during the deposition process, have been characterized both structurally and electronically. Zinc phosphide was chosen for this study because it is a promising material for the absorbing layer in a low-cost thin-film solar cell. The structure of the films has been studied using glancing-angle X-ray diffraction and transmission electron microscopy. Electron bombardment can be used to modify the properties of zinc-phosphide films. The e-beam parameters used in this study increased the degree of preferred orientation and altered the nature of the glass–Zn3P2 interface.
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