Abstract
Metal-chalcogenide systems are used in a variety of fields, including microelectromechanical systems, plasmonics, photonics and the fabrication of X-ray masks. The development of fabrication methods for micro- and nanostructures in metal-chalcogenide bilayers is of significant interest for these fields. This study investigates the effects of electron beam irradiation in an Ag/AsS2 bilayer using conductive atomic force microscopy. An unusual distribution of conductivity is observed, which suggests the presence of at least two competing mechanisms of Ag-ion migration within the amorphous chalcogenide during electron beam irradiation. The surface relief of the Ag/AsS2 bilayer is modified by an electric field from the conductive atomic force microscopy probe.
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