Abstract
In this paper, two metal-insulator-metal (MIM) antifuse structures were fabricated with amorphous Al2O3 deposited by atomic layer deposition (ALD) as the dielectric, and with Ti and TiN as top electrode, separately. The Ti electrode anitfuse device shows lower breakdown voltage, while the device with TiN electrode exhibits lower leakage current and longer time dependent dielectric breakdown (TDDB) in the off-state. Moreover, the on-state resistance of device with TiN electrode is slightly lower than that of Ti electrode. We also found that the device with TiN cannot be reset to higher resistance after dielectric breakdown which presents a strong filament, but the device with Ti electrode can be reset to a higher resistance if the reset current is larger than 20 mA. All the performance differences between the two devices are mainly attributed to the stronger ability of oxygen affinity of metal Ti than that of TiN.
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