Abstract
Abstract The effects of an electrical field on recrystallization of Cu have been investigated. A 12° off exact (1 1 2) [1 1 1 ¯ ] copper single crystal was rolled to 80% reduction. Samples cut from the deformed material were then annealed for 1 h at temperatures of between 200 °C and 400 °C. For each temperature, samples were annealed either with or without the presence of an electrical field of intensity 1500 V/cm. The microstructures were investigated in the longitudinal plane by using the electron backscatter pattern technique. Results show that the application of an external electric field might promote the grain growth rate, and also promote the formation of Σ3 twin boundary.
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