Abstract
DC and pulse-reverse electrodeposition mode were employed for the deposition of polycrystalline Cu(In,Ga)Se2 thin films. In comparison with DC electrodeposition mode, films obtained by pulse-reverse electrodeposition were smoother, denser and more uniform with good adhesion. The Ga content in final composition of CIGS thin film was improved in pulse-reverse electrodeposition mode. In addition, pulse-reverse electrodeposited CIGS thin films were more crystalline with chalcopyrite structure. The compact morphology without pores in the deposit was achieved in the pulse-reverse electrodeposited CIGS thin films by varying duty cycle.
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