Effects of dust particles and layer properties on organic electronic devices fabricated by stamping

Abstract

The mechanical properties of organic semiconductor thin films are determined using nanoindentation. The measured mechanical properties are incorporated into finite element simulations of deformation that arise during cathode patterning of organic electronic devices by pressure stamping methods. Simulations show that dust particles interposed between the stamp and film surface affect the evolution of contact areas when silicon or compliant polydimethyl-siloxane stamp dies are employed. We also examine the effects of the transferred metal layer thickness and stamp bulk modulus. Experimental and modeling results are found to be in good agreement. The implications of the results are discussed for the fabrication of a range of organic electronic devices.