Abstract
We report on the far-infrared (FIR) reflection spectra of high-quality ZnTe crystals exposed to CH4/H2 gases under different rf plasma powers. The effects of reactive ion etching on the effective refractive index of perturbed ZnTe surface layers have been investigated in the terahertz (THz) frequency range of 1.5–10.0 THz. The FIR refractive index has been found to decrease with the increase of plasma power, which has been well described by Sellmeier formulas. Furthermore, the obtained experimental data have been employed for THz electro-optic applications by predicting the effects of RIE on the second-order nonlinear susceptibility and the THz pulse intensity after dispersive propagation/absorption in the ZnTe surface layers.
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