Abstract
The translational temperature and absolute density of Si atoms in capacitively coupled SiF4 plasmas driving with the very high frequency (VHF) of 27 MHz or 60 MHz were measured by ultraviolet absorption spectroscopy employing a ring dye laser and a hollow cathode lamp. High temperatures of Si atoms above 1000 K at 27 MHz were obtained at an electron density of 5.0×1010 cm-3, which is considerably larger than that at 60 MHz at the same electron density. The translational temperature and absolute density of SiF4 molecules were also evaluated using infrared diode laser absorption spectroscopy. From the results measured systematically, it is proposed that the hot Si atom is created due to the difference in the energy of Si atoms produced from the electron impact dissociation of SiFx (x = 1-3) radicals and SiF4 molecules. This result is very important from the viewpoint of diagnostics of atoms and plasma chemistries.
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