Abstract
In order to investigate the effects of the modulation of drain doping concentration (Ndrain) on alternating current (AC) switching characteristics of a tunnel filed-effect transistor (TFET) inverter, the characteristics of TFETs with various Ndrains are analyzed rigorously through mixed-mode device and circuit TCAD simulations. As the Ndrain gets decreased, the drain current (ID) becomes reduced and the gate-to-drain capacitance (CGD) reflects the entire gate capacitance (CGG) at a lower gate voltage (VG), which leads to the degradation of falling/rising delay in TFET inverters. These phenomena are explained successfully by the change of quasi-Fermi energy in the drain (EF_drain) as a function of VG. The EF_drain rises dramatically from when tunneling current starts to flow from the source in the n-type TFET with low Ndrain. As a result, drain-side channel inversion occurs at a lower VG due to the reduction of the energy barrier between the EF_drain and the conduction band edge of the channel.
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