Effects of dose shift on line width, line edge roughness, and stochastic defect generation in chemically amplified extreme ultraviolet resist with photodecomposable quencher

Abstract

In chemically amplified resists used for high-volume production of semiconductor devices, the control of acid catalytic reaction is essential for fine patterning. A basic compound, called a quencher, plays an important role in the control of acid catalytic reaction. In particular, the photodecomposable quencher is effective for the enhancement of the chemical gradient. In this study, the effects of photodecomposable quenchers on the dose shift (the deviation from the sizing dose) dependences of line width, line edge roughness (LER), and stochastic defect generation were investigated, assuming line-and-space patterns with 11 nm half-pitch. The exposure latitude of line width in a chemically amplified resist with photodecomposable quenchers was larger than that in a chemically amplified resist with conventional non-photodecomposable quenchers at sizing doses >20 mJ cm−2. By using photodecomposable quenchers, LER and the probability of stochastic defect generation were decreased, while the dose shift dependences of LER and stochastic defect generation did not significantly differ, compared with those observed using conventional non-photodecomposable quenchers.