Abstract
In this work, we have investigated size, doping and strain effect on the electrical properties of n-type and p-type MoS2 monolayer, one of the most interesting two-dimensional layered materials. We found that the bandgap of the MoS2 will reduce from 1.8 eV to 1.2 eV as the infinite lattice being shrunk into 10×10 nanoribbon. The electrical properties of a nanoscale MoS2 monolayer exhibited large variation (≈ 20%) as its doping level or dopant position changes, although the band-gap varies slightly. The study on the strain effect indicates that the bandgap of infinite MoS2 monolayer monotonically reduces as the increasing of the strain strength. The variation in electrical properties induced by size, doping and strain effect may post a serious challenge on the application in logic and memory devices.
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