Abstract
Thin-film electroluminescent devices containing Ca0.6Sr0.4TiO3:Pr, Al-doped Ca0.6Sr0.4TiO3:Pr, or La-doped Ca0.6Sr0.4TiO3:Pr phosphors were prepared by a conventional sol–gel and firing method. Doping by Al improved the performance of the device markedly, in that its current-starting voltage and emission-starting voltage decreased, its luminance response became more rapid, and its relative quantum efficiency increased. Almost all the effects of doping with La were opposite to those of doping with Al. On stacking thin films of Al-doped Ca0.6Sr0.4TiO3:Pr and La-doped Ca0.6Sr0.4TiO3:Pr, the current-starting voltage and the emission-starting voltages decreased further and the relative quantum efficiency increased further in comparison with the Al-doped film. The effects of doping by Al and La can be understood by assuming that Ca0.6Sr0.4TiO3:Pr separates into n-type and p-type semiconducting regions as a result of the electromigration of oxygen vacancies, and that the oxygen-vacancy density increases or decreases on doping by Al and La, respectively.
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