Effects of doping at the ppm level in Simple n+p-homojunction organic photovoltaic cells

Abstract

The effects of doping at concentrations at the ppm level in organic photovoltaic cells were clarified using simple n+p-homojunctions. With doping from 0 to 10 ppm, the fill factor increased due to the appearance of majority carriers. From 10 to 100 ppm, the photocurrent density increased due to an increase in the built-in potential, i.e., the formation of an n+p-homojunction. The photocurrent was increased by a factor of 1.3 by directly doping the photoactive co-deposited layer with acceptor molecules at a concentration of 100 ppm.