Effects of dopants and hydrogen on the electrical conductivity of ZnO

Abstract

The effects of dopants on the electrical conductivity of ZnO were investigated through the ac impedance spectroscopy. The doping of Al increased the electrical conductivity of ZnO greatly, whereas the doping of Li decreased it both in the grain and in the grain boundary. The doping of the 3d transition metals (Co, Mn, and Cu) made the grain boundary more resistive, but the doping effect on the electrical conductivity inside the grain was varied depending on the doping elements. The doping of Co had no significant effects on the electrical conductivity of the grain, and the doping of Mn made the grain a little more resistive. The doping of Cu made the grain much more resistive. In addition, hydrogen was introduced into ZnO by the ion implantation method. The electrical conductivity in the hydrogen-implanted ZnO layer increased by four orders of magnitude. The mechanisms for the doping effects were discussed in this investigation.