Abstract
Photoluminescence (PL) and cathodoluminescence (CL) of light emitting diode samples with various InGaN/GaN multi-quantum-well (MQW) active structures and a range of dislocation density (∼7×10 8/cm 2 to ∼9×10 9/cm 2) were investigated. Results indicate that threading dislocations have impact on the luminescence of GaN thin films and act as a nonradiative recombination center. It was also observed that the optical emission is affected by MQW structure such as the number of quantum wells.
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