Abstract
High temperature transport characteristics of unintentionally doped GaNhave been investigated by means of high temperature Hall measurementsfrom room temperature to 500°C. The increment of electronconcentration from room temperature to 500°C is found to varylargely for different samples. The dispersion of temperature dependenceof electron concentration is found to be directly proportional to thedensity of dislocations in GaN layers calculated by fitting the FWHM ofthe rocking curves in x-ray diffraction measurements (XRD). The builduplevels in persistent photoconductivity (PPC) are also shown to bedirectly proportional to the density of dislocations. The correlationof XRD, Hall and PPC results indicate that the high temperaturedependence of electron density in unintentional doped GaN is directlydislocation related.
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