Abstract
We use the successive ionic layer adsorption and reaction (SILAR) method for the preparation of quantum dot sensitized solar cells, to improve the performance of solar cells by doping quantum dots. We tested the UV‐Vis absorption spectrum of undoped CdS QDSCs and Cu doped CdS QDSCs with different doping ratios. The doping ratios of copper were 1 : 100, 1 : 500, and 1 : 1000, respectively. The experimental results show that, under the same SILAR cycle number, Cu doped CdS quantum dot sensitized solar cells have higher open circuit voltage, short circuit current density photoelectric conversion efficiency than undoped CdS quantum dots sensitized solar cells. Refinement of Cu doping ratio are 1 : 10, 1 : 100, 1 : 200, 1 : 500, and 1 : 1000. When the proportion of Cu and CdS is 1 : 10, all the parameters of the QDSCs reach the minimum value, and, with the decrease of the proportion, the short circuit current density, open circuit voltage, and the photoelectric conversion efficiency are all increased. When proportion is 1 : 500, all parameters reach the maximum values. While with further reduction of the doping ratio of Cu, the parameters of QDSCs have a decline tendency. The results showed that, in a certain range, the lower the doping ratio of Cu, the better the performance of quantum dot sensitized solar cell.
Highlights
Due to rapid growth in the world economy, energy problems have considerable attention in the past several decades [1]
We use the successive ionic layer adsorption and reaction (SILAR) method for the preparation of quantum dot sensitized solar cell to improve the performance of solar cells by doping quantum dots
With the aid of research, we describe a method for improving CdS Quantum dot sensitized solar cells (QDSCs) efficiency
Summary
Due to rapid growth in the world economy, energy problems have considerable attention in the past several decades [1]. Researchers have been developing renewable energies including solar, nuclear, wind, and biopower [2] Among these alternatives, solar-to-electric energy conversion systems have always been a fascinating and challenging frontier for science and application [1,2,3]. Quantum dot sensitized solar cells (QDSCs) are gaining attention as they show promise toward the development of generation solar cells [4,5,6,7,8]. The experimental results show that, under the same SILAR cycle number, Cu doped CdS quantum dot sensitized solar cells have higher open circuit voltage, short circuit current density, andphotoelectric conversion efficiency than undoped CdS quantum dots sensitized solar cells. The results showed that, in a certain range, the lower the doping ratio of Cu is, the better the performance of quantum dot sensitized solar cell is
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