Effects of different Bismuth concentrations of InSbBi crystals grown by Bridgman technique

Abstract

InSb1-xBix (x = 0, 0.005, 0.010, 0.015) crystals are grown by vertical Bridgman technique using single-zone resistive heating furnace. The main objective of this paper is to study the improvement of thermoelectric quality factors by different concentrations of Bismuth (Bi) in InSbBi crystals. EDAX (Energy Dispersive Analysis of X-rays) confirms that the grown crystals are pure and show the presence of In, Sb, and Bi in proportion. Powder X-ray diffractogram confirms the cubic zinc blend structure of these crystals with space group F-43m and all the diffraction peaks are matched well to the standard JCPDS-ICDD No. 6-0208. Raman spectra are recorded from 80 K to 300 K and Raman mapping spectra at room temperature for all above crystals have shown the presence of TO mode at 179.91 cm−1 and LO mode at 190.16 cm−1. The sharpness and intensity of Raman spectra have clearly reflected the purity and quality of the grown crystals. The electrical conductivity σ is found to increase slowly upto 450 K and then increases linearly upto 600 K and above that, it gets saturated in all crystals. The Seebeck coefficient remains negative showing that these crystals are n-type semiconductor and its value is found to be increased to −200 μV/K for InSb0.985Bi0.015 in comparison to −150 μV/K for pure InSb near 600 K. From the lattice thermal conductivity, power factor and thermoelectric figure of merit i.e. ZT calculations, it is concluded that InSb0.985Bi0.015 at 670 K gives the highest value of ZT = 0.45 in comparison to other grown crystals.