Abstract
In the present study, sol-gel dip coating method was used to synthesize GaN thin films. Gallium nitrate hydrate (Ga(NO3)3.xH2O) powder and ethanol were used to prepare the precursor solution and diethanolamine (DEA) was added as stabilizer. Different amount of DEA were added into the gallium nitride (GaN) precursor at 0 ml, 0.10 ml, 0.25 ml, 0.50 ml, 0.75 ml and 1.0 ml respectively. The effects of different amounts of DEA on GaN thin films on structural and optical properties of the GaN films were studied. The high resolution X-ray diffraction results revealed that the deposited GaN thin films have hexagonal wurtzite structure with (002) preferred orientation. The intensity of the GaN (002) diffraction peaks increases with the increase of amount of surfactant from 0 ml to 0.75 ml and degraded at 1.0 ml. The Raman signal of E2 (high) GaN peaks increases and becomes stronger at 0.75 ml. Further increase in the amount of surfactant has caused the intensity of E2 (high) GaN peak decreases. The measured results show that the amount of surfactant exerts a strong influence in improving crystallinity of GaN thin films.
Highlights
EFFECTS OF DIFFERENT AMOUNTS OF SURFACTANT ON CHARACTERISTICS OF SOL-GEL
High resolution X-ray diffraction results revealed that hexagonal wurtzite structure gallium nitride (GaN) thin film with (002) preferred orientation was sythesized
The intensity of the GaN(002) diffraction peaks increases with the increase of amount of surfactant from 0 ml to 0.75 ml and degraded at 1.0 ml
Summary
EFFECTS OF DIFFERENT AMOUNTS OF SURFACTANT ON CHARACTERISTICS OF SOL-GEL Maizatul Akmam Ab Hamid1,*, Ng Sha Shiong1 1Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have