Abstract
Effects of Dielectric Screening Function and Image Charges on Hydrogenic Donor Binding Energy in a Surface Quantum Well
Highlights
Low dimensional semiconductor systems, especially the nature of the impurity states in quantum wells, are extensively studied because of purely scientific interest and their potential applications in the manufacturing of the opto-electronic devices.[1]
Surface Quantum Well (SQW) composed of vacuum/GaAs/GaAlAs are of considerable interest due to: (1) the presence of localised states even above the single quantum barrier in the GaAlAs layer;[10] and (2) the image charges that arise from the large dielectric mismatch at the single vacuum/GaAs interface
The effect of dielectric screening function, which is the spatial dependent screening of an impurity ion caused by the valence electrons and the effect of dielectric mismatch at the interfaces play a very important role in the study of hydrogenic donor binding energy in low dimensional semiconductor systems
Summary
Especially the nature of the impurity states in quantum wells, are extensively studied because of purely scientific interest and their potential applications in the manufacturing of the opto-electronic devices.[1]. The effect of dielectric screening function, which is the spatial dependent screening of an impurity ion caused by the valence electrons and the effect of dielectric mismatch at the interfaces play a very important role in the study of hydrogenic donor binding energy in low dimensional semiconductor systems. Deng and Gu have calculated the effects of the image potential on hydrogenic impurity binding energies in GaAs/AlAs quantum well wires with rectangular cross section.[26] The role of dielectric constant mismatch on shallow donor impurities in GaAs-Ga1-xAlxAs quantum well structures have been investigated by Fraizzoli et al.[27] The effect of image charges due to dielectric mismatch on the properties of donor in semiconductor nanostructures bounded by air have been studied by Corfdir et al.[28]. The role of image charges which arise due to the large difference in the dielectric constants on either side of the interface between vacuum and GaAs, in such a SQW are considered
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