Abstract
Aluminium doped ZnO (ZnO:Al) films were deposited on polymer substrates by RF magnetron sputtering. The effects of deposition temperatures on structure and properties of films were investigated by X-ray diffractometery, Scanning electronic microscopy, UV-visible spectrophotometer, as well as Four-point Probes System. The results revealed that moderate deposition temperature was helpful to improve the crystal quality and optoelectronic properties of ZnO:Al films. The lowest resistivity of 9.5×10-3Ω•cm and the average transmittance of 76% in the visible region was obtained for the film deposited from ZnO:2wt% Al2O3 target at 75°C.
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