Abstract
Yttrium-doped HfO2 (Y:HfO2) thin films with different deposition temperature were deposited on p-type (100) silicon substrates. The composition and chemical states of each element in the films were investigated by x-ray photoelectron spectroscopy (XPS). The grazing angle incidence x-ray diffraction (GIXRD) patterns suggested the phase transformation of Y:HfO2 thin films as the increase of deposition temperature. The thickness and density of the thin films were calculated by fitting x-ray reflectivity (XRR) data. Root mean square (RMS) roughness was obtained from atomic force microscopy (AFM) images. As the deposition temperature increased, a transition from linear dielectric to ferroelectric behavior happened. Lower leakage current density was obtained by increasing the deposition temperature.
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