Effects of Deposition Temperature on Low-Dielectric Fluorinated Amorphous Carbon Films for Ultralarge-Scale Integration Multilevel Interconnects

Abstract

Fluorinated amorphous carbon (a-C:F) thin films were prepared with an electron cyclotron resonance chemical vapor deposition (ECRCVD) system using gas mixtures of C2F6 and CH4. The effects of deposition temperature on the properties of ECRCVD-prepared a-C:F films were investigated. Both the deposition rate and fluorine content of the films decrease linearly with increasing deposition temperature. The dielectric constant increased from 2.45 to 2.7 with increasing deposition temperature, while thermal stability was enhanced. Reduction of the fluorine content in the film increases the degree of crosslinking in the films and thereby leads to better thermal stability.