Abstract
The effects of substrate temperatures and annealing temperatures on the microstructures and ferroelectric properties of PbZ <TEX>$r_{0.52}$</TEX> <TEX>$Ti_{0.48}$</TEX> <TEX>$O_3$</TEX>(PZT) thin fims prepared by pulsed laser deposition (PLD) were investigated. For this purpose, the PZT films were deposited at various substrate temperatures (400~<TEX>$600^{\circ}C$</TEX>) with post annealing process in oxygen atmosphere. The single perovskite phase was formed at the deposition temperature of 500 to 55<TEX>$0^{\circ}C$</TEX> without post annealing and the PZT films deposited below 50<TEX>$0^{\circ}C$</TEX> formed the single phase with post annealing at <TEX>$650^{\circ}C$</TEX>. The grain size of the films increased and the grain boundary of the films was clearly defined as the substrate temperature increased from 400 to 55<TEX>$0^{\circ}C$</TEX>. The remnant polarization (Pr) and the coercive field (Ec) of the films deposited at 55<TEX>$0^{\circ}C$</TEX> and annealed at <TEX>$650^{\circ}C$</TEX> were 34.3 <TEX>$\mu$</TEX>C/c <TEX>$m^2$</TEX>and 60.2 kV/cm, respectively.y.y.
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