Effects of deposition parameters on SiCl n ( n=0–2) densities in SiCl 4 glow discharge plasma

Abstract

The relative densities of SiCl n ( n=0–2) in SiCl 4 radio frequency (rf) glow discharge plasma are measured by mass spectrometry. The effects of discharge parameters, including rf power, discharge pressure, substrate temperature and SiCl 4 flow rate on the relative densities of SiCl n ( n=0–2) are investigated in detail. The experimental results demonstrate that the relative densities of SiCl n ( n=0–2) in SiCl 4 plasma are dependent strongly on these discharge parameters. An optimum configuration of discharge parameters (low rf power, high discharge pressure, low substrate temperature and low flow rate), which enhanced the formation of SiCl n ( n=0–2) radicals, was searched. Further, researching of SiCl n ( n=0–2) spatial distribution for seeking a suitable deposition condition is beneficial for understanding the deposition mechanism of thin films.