Abstract
The effects of structural and oxygen site defects on the ferromagnetic phase transition and magnetotransport in doped lanthanum manganite films have been examined. Oxygen defects were introduced through a vacuum annealing process while structural defects were introduced using ion irradiation. The introduction of both defect types strongly suppressed the Curie temperature Tc while increasing the peak resistivity, activation energy, and magnetoresistance ratio. For defect types leading to similar reductions in Tc, structural defects lead to a broader transition regime and a smaller MRR than are found for oxygen defects. Well above Tc both defect types lead to nearly identical resistivity curves. Structural defects are argued to primarily affect the carrier mobility, hence these data provide a clue that the carrier mobility is dominating the transport properties in this regime.
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