Abstract
The effects of structural and oxygen site defects on the ferromagnetic phase transition and magnetotransport in doped lanthanum manganite films have been examined. Oxygen defects were introduced through a vacuum annealing process while structural defects were introduced using ion irradiation. The introduction of both defect types strongly suppressed the Curie temperature Tc while increasing the peak resistivity, activation energy, and magnetoresistance ratio. For defect types leading to similar reductions in Tc, structural defects lead to a broader transition regime and a smaller MRR than are found for oxygen defects. Well above Tc both defect types lead to nearly identical resistivity curves. Structural defects are argued to primarily affect the carrier mobility, hence these data provide a clue that the carrier mobility is dominating the transport properties in this regime.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
