Abstract
Temperature dependent studies of the resonant and phonon-assisted radiative recombination of free excitons (FEs) in GaN are performed and are analyzed within the polariton concept. A strong impurity scattering of exciton-polaritons is proposed to be responsible for the revealed unusual behavior of the free A exciton in GaN, i.e. an enhanced intensity of the resonant FE emission in comparison with its longitudinal optical (LO) phonon replicas at low temperatures, as well as the narrow line shape of the 1-LO assisted transitions.
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