Abstract
In order to examine the difference in the irradiation effects on Si devices between DT and DD neutrons, CCD image sensors, memory ICs and a Si detector were irradiated with neutrons from a deuteron accelerator. The transient effects (i.e. neutron-induced background noises) and permanent effects (i.e. neutron damage) on them were in situ measured during irradiation. Regarding the transient effects, brightening spot noises, soft-error upsets and induced-charge noises were measured for the CCDs, memory ICs and Si detector, respectively. As for the permanent effect, the number of damaged cells of the CCDs and the leakage current of the Si detector increased with neutron fluence. Also we developed a Monte-Carlo code with the TRIM code to evaluate the correlation of DT and DD neutron effects on Si devices. The calculated correlation factor of DT and DD neutron damage for Si devices agreed approximately with the correlation factor obtained from the irradiation experiments on the CCDs and Si detector.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
