Effects of DC sputtering conditions on formation of Ge layers on Si substrates by sputter epitaxy method

Takahiro Tsukamoto,Akifumi Kasamatsu,Yoshiyuki Suda,Toshiaki Matsui,Nobumitsu Hirose,Takashi Mimura

doi:10.1109/istdm.2014.6874675

Effects of DC sputtering conditions on formation of Ge layers on Si substrates by sputter epitaxy method

Takahiro Tsukamoto, Akifumi Kasamatsu + Show 4 more

https://doi.org/10.1109/istdm.2014.6874675

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Publication Date: Jun 1, 2014

Affiliation: Tokyo University of Agriculture and Technology, National Institute of Information and Communications Technology

#Sputter Epitaxy Method #Si Substrates + Show 8 more

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Abstract

The formation of Ge layers on the Si (001) substrates with 3.5 Ω cm resistivity by sputter epitaxy method has been investigated. Flat Ge layers on the Si substrates are obtained by adjusting the DC sputtering conditions. High DC power sputtering modifies the surface morphology and leads to the formation of flat Ge layers.

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