Abstract
CuO-doped Ba(Zr0.05Ti0.95)O3 (BZT) ceramics were prepared using conventional solid state reaction method, and their structure and electrical properties were investigated. It was found that a small amount of CuO could lower the sintering temperature significantly and make their microstructure more densified than pure BZT. The ceramics with 1.2mol% CuO, sintered at 1250°C, showed excellent piezoelectric properties with d33~320pC/N and kp=44%. The sintering temperature was decreased by 150°C than that for pure BZT ceramics while showing comparable piezoelectric properties. Moreover, the influence of sintering temperature on the optimally 1.2mol% CuO-doped BZT ceramics was studied. With the temperature change, different patterns of crystal growth were observed in the doped BZT ceramics. When the sintering temperature increased from 1200°C to 1350°C, the patterns of normal–abnormal–normal grain growth were changed accordingly.
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