Abstract
The non-stoichiometric CaCu3+xTi4O12 (x = 0, ±0.1, ±0.2, ±0.3) thin films were prepared by sol–gel method and sintered at 700 °C. X-ray diffraction and Scanning electron microscope were used to analyze phase compositions and the microstructure characteristics of the films. CuO and Cu2O secondary phases were detected in the non-stoichiometric samples. The non-Ohmic behaviors were determined by a semiconductor parameter analyzer. The results showed that the breakdown voltages of Cu non-stoichiometric samples were less sensitive to different voltage rise rate. Cu non-stoichiometry would result in the increase in nonlinear coefficients (α) and barrier heights (ΦB). The breakdown voltages decreased with the increased environmental temperatures because of the intrinsic effect, which indicates the existence of back-to-back Schottky barriers at grain boundaries.
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