Abstract
A new approach for doping of cesium atoms in Bi2Te3 nanostructures using the inexpensive solvothermal route at a temperature of 100°C is presented. X-ray diffraction (XRD) pattern, scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), UV–vis spectral studies and electrical studies (I–V measurements) were carried out for both pure Bi2Te3 and Cs-doped Bi2Te3 nano-samples. The experimental outcome shows that the 2at.% doping of cesium results in the decrement of band gap and significant enhancement of the current by 3 orders of magnitude. The experimental observations also show that the doping effect of Cesium ions in Bi2Te3 nanostructures changes the linear behavior of I–V curve.
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