Abstract
Self-organized Si nano-cone arrays induced by Ar+ ion sputtering on different Si crystallographic planes with different co-deposited alien atoms are investigated. The Si planes are (100), (110), and (111) ones, and the alien elements are Ta, Mo, Fe, and C, respectively. It is found that the growth of Si nano-cone arrays is insensitive to the initial crystallographic plane, but depends strongly on the co-deposited element. For the same Ar+ ion dose and sample temperature, the smaller the activation energy between the co-deposited element and Si is, the larger the average cone height and base diameter are. It is found that the preferential sputtering does not play an important role in the nano-cone formation. A model based on the concepts of classical surface-curvature-dependent sputtering yield and the formation of stationary silicide is proposed, which explains the observed results. The results of microstructural and compositional analysis support the proposed model.
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