Abstract
The thin films of Ti0.9F0.1-xCrxO2 (x = 0.0, 0.02, 0.04, 0.06, 0.08, 0.1) have been deposited on Si (100) substrate by pulsed laser deposition (PLD) technique at substrate temperature of 630ᶱC. The deposition time was 60 min. The synthesized samples have been characterized by X-Ray diffractometer (XRD) for structural study, Atomic force microscopy (AFM) and Scanning electron microscopy (SEM) for surface analysis, EDX for elemental composition, Vibrating sample magnetometer (VSM) for magnetic properties, Spectroscopic ellipsometry (SE) for optical properties and four probe Hall effect measurements for electrical properties. Structural analysis revealed pure phase of rutile without any secondary peak. AFM and SEM measurements revealed decrease in crystallinity and increase in grain size. Magnetic characterization showed ferromagnetic behavior for all thin films at room temperature. Optical characterization revealed red shift in band gap energy with increasing amount of Cr concentration. Semiconducting behavior with n- type carriers is observed from electrical measurements.
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