Abstract

AbstractMonte‐Carlo simulations predict that a local correlated disorder is responsible for many of the novel transport and magnetic properties of colossal magnetoresistance (CMR) materials such as manganites. One important prediction of these models is that the resistivity at the metal–insulator transition (MIT) in manganites depends strongly on the correlated quenched disorder. However, experimental confirmation has been challenging since it is difficult to control the amount of disorder in these compounds. We carried out experiments on Sm0.55Sr0.45MnO3, a prototypical CMR manganite with a sharp MIT, whereby the oxygen‐related disorder is systematically enhanced by low temperature thermal activation. We observe dramatic changes in the temperature dependence of resistivity at the MIT as the amount of quenched disorder is increased, occurring in a manner that is in agreement with theoretical predictions.magnified imageTemperature dependence of resistivity of Sm0.55Sr0.45MnO3 for different annealing times at 350 °C in vacuum.(© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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