Effects of cooling rates on the crystal orientation of sputtered Pb-Ti-O thin films

Abstract

Thin films of Pb-Ti-O families, PbTiO<SUB>3</SUB> (PT) and (Pb,La)TiO<SUB>3</SUB> (PLT), were grown at 600 degree(s)C on (100)MgO substrates by rf- magnetron sputtering at various cooling rates (3 degree(s)C/min to 33 degree(s)C/min). It is found that c-axis orientation of the PT thin films was enhanced by the increase of the cooling rates and the a- axis orientation of PT thin films was enhanced by the decrease of the cooling rates. While, c-axis orientation of the PLT thin films was achieved independent of the cooling rates. The growth mechanism of the a-axis orientation of PT thin films will be governed by an epitaxial growth and the c-axis orientation will be caused by the preferred orientation. The cooling rates are essential for the control of the orientation of PT thin films on (100)MgO substrates.