Effects of controlled texturization of the crystalline Si surface on the SiO/sub 2//Si effective barrier height

Abstract

A two-stage plasma etch texturination process to control the level of crystalline silicon surface roughness has been investigated. Initially, a Cl/sub 2/ plasma etch is used to produce a very rough Si surface. This is followed by an isotropic SF/sub 6/ plasma etch, whose etch time is used to reduce and control the level of surface roughness created by the previous step. Oxides grown on texturized Si surfaces with short SF/sub 6/ etch times exhibit lower effective SiO/sub 2//Si barrier height and greater electron injection enhancement than those with longer SF/sub 6/ etch times. >